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APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. (R) TO-220 APT28GA60K Single die IGBT FEATURES * Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant TYPICAL APPLICATIONS * ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" frome Case for 10 Seconds 1 Ratings 600 50 28 84 30 223 84A @ 600V -55 to 150 300 Unit V A V W C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE = 15V, IC = 16A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 600 Typ 2.0 1.9 4.5 Max 2.5 6 250 2500 100 Unit V VGE =VCE , IC = 1mA A nA 052-6330 Rev B 12 - 2008 VGS = 30V Thermal and Mechanical Characteristics Symbol RJC WT Torque Characteristic Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-220 Package), 4-40 or M3 screw Min - Typ 1.9 Max 0.56 10 Unit C/W g in*lbf Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6 TJ = 25C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 16A TJ = 150C, RG = 104, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 16A RG = 104 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 16A RG = 104 TJ = +125C 84 11 8 101 27 239 170 11 10 132 114 412 335 APT28GA60K Typ 2109 214 26 90 14 28 nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Min Max Unit A ns J ns J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6330 Rev B 12 - 2008 Typical Performance Curves 250 V GE APT28GA60K 250 TJ= 150C IC, COLLECTOR CURRENT (A) 200 TJ= 125C 15V 13V 12V 11V 10V 9V 50 8V 6V = 15V IC, COLLECTOR CURRENT (A) 200 TJ= 55C TJ= 25C 150 150 100 100 50 0 0 5 10 15 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 0 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C) I = 16A C T = 25C J 280 240 200 160 120 80 15 VCE = 120V 10 VCE = 300V IC, COLLECTOR CURRENT (A) 5 VCE = 480V TJ= 25C 40 TJ= 125C 0 0 TJ= -55C VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 4 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 2 0 0 20 40 60 80 GATE CHARGE (nC) FIGURE 4, Gate charge 100 5 3 4 IC = 400A IC = 200A 3 IC = 32A IC = 16A 2 IC = 100A 1 2 1 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 8A 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10 0 6 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60 50 40 30 20 10 0 052-6330 Rev B 12 - 2008 0 0 25 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A) 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature 50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 25 Typical Performance Curves 16 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 15 14 13 12 11 10 9 0 5 10 15 20 25 30 35 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 35 30 25 tr, RISE TIME (ns) 20 15 10 5 0 TJ = 25 or 125C,VGE = 15V RG = 10, L = 100H, VCE = 400V VCE = 400V TJ = 25C, or 125C RG = 10 L = 100H APT28GA60K 200 160 120 VGE =15V,TJ=125C VGE = 15V 80 VGE =15V,TJ=25C 40 VCE = 400V RG = 10 L = 100H 8 0 5 10 15 20 25 30 35 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 150 125 100 75 50 25 0 RG = 10, L = 100H, VCE = 400V 0 TJ = 125C, VGE = 15V tr, FALL TIME (ns) TJ = 25C, VGE = 15V 0 5 10 15 20 25 30 35 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1000 Eon2, TURN ON ENERGY LOSS (J) 900 800 700 600 500 400 300 200 100 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 1500 SWITCHING ENERGY LOSSES (J) 1250 1000 Eoff,32A V = 400V CE V = +15V GE T = 125C J EOFF, TURN OFF ENERGY LOSS (J) V = 400V CE V = +15V GE R =10 G 0 10 20 30 40 50 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1000 900 800 700 600 500 400 300 200 100 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 1000 SWITCHING ENERGY LOSSES (J) V = 400V CE V = +15V GE R = 10 G V = 400V CE V = +15V GE R = 10 G TJ = 125C TJ = 125C TJ = 25C TJ = 25C 0 0 Eon2,32A Eon2,32A 800 Eoff,32A 600 Eon2,16A 750 500 250 Eoff,8A Eon2,16A Eoff,16A Eon2,8A 052-6330 Rev B 12 - 2008 400 Eoff,16A 200 Eon2,8A Eoff,8A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance 0 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 0 Typical Performance Curves 10000 Cies C, CAPACITANCE (pF) 1000 200 100 IC, COLLECTOR CURRENT (A) APT28GA60K 10 100 Coes 1 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 10 Cres 1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area 0.1 0.6 ZJC, THERMAL IMPEDANCE (C/W) 0.5 0.4 0.3 0.2 0.1 0 10-5 10 -4 D = 0.9 0.7 0.5 Note: 0.3 PDM t1 t2 0.1 0.05 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10 -3 10 -2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 052-6330 Rev B 12 - 2008 APT28GA60K 10% Gate Voltage td(on) 90% TJ = 125C Collector Current tr APT30DQ120 V CC IC V CE 5% 10% 5% Collector Voltage Switching Energy A D.U.T. Figure 12, Inductive Switching Test Circuit Figure 13, Turn-on Switching Waveforms and Definitions 90% 90% td(off) TJ = 125C Gate Voltage Collector Voltage tf 10% 0 Collector Current Switching Energy Figure 14, Turn-off Switching Waveforms and Definitions TO-220 (K) Package Outline 2.80 (.110) 2.60 (.102) 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 7.10 (.280) 6.70 (.263) 12.192 (.480) 9.912 (.390) 3.70 (.145) 2.20 (.126) 3.40 (.133) Dia. 3.10 (.123) 3.683 (.145) MAX. 0.48 (.019) 0.44 (.017) 2.85 (.112) 2.65 (.104) 052-6330 Rev B 12 - 2008 14.73 (.580) 12.70 (.500) Gate Drain Collector Emitter Source 1.01 (.040) 3-Plcs. .83 (.033) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190) 1.77 (.070) 3-Plcs. 1.15 (.045) 4.80 (.189) 4.60 (.181) Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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